philips semiconductors product specification triacs bt139b series general description quick reference data passivated triacs in a plastic envelope symbol parameter max. max. unit suitable for surface mounting, intended for use in applications requiring high bt139b- 600 800 bidirectional transient and blocking bt139b- 600f 800f voltage capability and high thermal bt139b- 600g 800g cycling performance. typical v drm repetitive peak off-state 600 800 v applications include motor control, voltages industrial and domestic lighting, heating i t(rms) rms on-state current 16 16 a and static switching. i tsm non-repetitive peak on-state 140 140 a current pinning - sot404 pin configuration symbol pin description 1 main terminal 1 2 main terminal 2 3 gate mb main terminal 2 limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -600 -800 v drm repetitive peak off-state - 600 1 800 v voltages i t(rms) rms on-state current full sine wave; t mb 99 ?c - 16 a i tsm non-repetitive peak full sine wave; t j = 25 ?c prior to on-state current surge t = 20 ms - 140 a t = 16.7 ms - 150 a i 2 ti 2 t for fusing t = 10 ms - 98 a 2 s di t /dt repetitive rate of rise of i tm = 20 a; i g = 0.2 a; on-state current after di g /dt = 0.2 a/ s triggering t2+ g+ - 50 a/ s t2+ g- - 50 a/ s t2- g- - 50 a/ s t2- g+ - 10 a/ s i gm peak gate current - 2 a v gm peak gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature 13 mb 2 t1 t2 g 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the triac may switch to the on-state. the rate of rise of current should not exceed 15 a/ s. april 2003 1 rev 1.400
philips semiconductors product specification triacs bt139b series thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance full cycle - - 1.2 k/w junction to mounting base half cycle - - 1.7 k/w r th j-a thermal resistance minimum footprint, fr4 board - 55 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit bt139b- ... ...f ...g i gt gate trigger current v d = 12 v; i t = 0.1 a t2+ g+ - 5 35 25 50 ma t2+ g- - 8 35 25 50 ma t2- g- - 10 35 25 50 ma t2- g+ - 22 70 70 100 ma i l latching current v d = 12 v; i gt = 0.1 a t2+ g+ - 7 40 40 60 ma t2+ g- - 20 60 60 90 ma t2- g- - 8 40 40 60 ma t2- g+ - 10 60 60 90 ma i h holding current v d = 12 v; i gt = 0.1 a - 6 45 45 60 ma v t on-state voltage i t = 20 a - 1.2 1.6 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.7 1.5 v v d = 400 v; i t = 0.1 a; 0.25 0.4 - v t j = 125 ?c i d off-state leakage current v d = v drm(max) ; - 0.1 0.5 ma t j = 125 ?c dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit bt139b- ... ...f ...g dv d /dt critical rate of rise of v dm = 67% v drm(max) ; 100 50 200 250 - v/ s off-state voltage t j = 125 ?c; exponential waveform; gate open circuit dv com /dt critical rate of change of v dm = 400 v; t j = 95 ?c; - - 10 20 - v/ s commutating voltage i t(rms) = 16 a; di com /dt = 7.2 a/ms; gate open circuit t gt gate controlled turn-on i tm = 20 a; v d = v drm(max) ;- - - 2 - s time i g = 0.1 a; di g /dt = 5 a/ s april 2003 2 rev 1.400
philips semiconductors product specification triacs bt139b series fig.1. maximum on-state dissipation, p tot , versus rms on-state current, i t(rms) , where = conduction angle. fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 20ms. fig.3. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.4. maximum permissible rms current i t(rms) , versus mounting base temperature t mb . fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t mb 99?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0 5 10 15 20 0 5 10 15 20 25 = 180 120 90 60 30 it(rms) / a ptot / w tmb(max) / c 125 119 113 107 101 95 1 -50 0 50 100 150 0 5 10 15 20 bt139 99 c tmb / c it(rms) / a 10us 100us 1ms 10ms 100ms 10 100 1000 t / s itsm / a t i tsm time i tj initial = 25 c max t di /dt limit t t2- g+ quadrant 0.01 0.1 1 10 0 10 20 30 40 50 surge duration / s it(rms) / a 1 10 100 1000 0 50 100 150 number of cycles at 50hz itsm / a t i tsm time i tj initial = 25 c max t -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 tj / c vgt(tj) vgt(25 c) april 2003 3 rev 1.400
philips semiconductors product specification triacs bt139b series fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-mb , versus pulse width t p . fig.12. typical commutation dv/dt versus junction temperature, parameter commutation di t /dt. the triac should commutate when the dv/dt is below the value on the appropriate curve for pre-commutation di t /dt. -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c t2+ g+ t2+ g- t2- g- t2- g+ igt(tj) igt(25 c) 0 0.5 1 1.5 2 2.5 3 0 10 20 30 40 50 vt / v it / a tj = 125 c tj = 25 c typ max vo = 1.195 v rs = 0.018 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c il(tj) il(25 c) 0.001 0.01 0.1 1 10 tp / s zth j-mb (k/w) 10us 0.1ms 1ms 10ms 0.1s 1s 10s t p p t d unidirectional bidirectional -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 tj / c ih(tj) ih(25c) 0 50 100 150 1 10 100 1000 tj / c 9.3 dv/dt (v/us) 5.6 dicom/dt = 20 a/ms 16 off-state dv/dt limit bt139 series bt139...f series 12 7.2 bt139...g series april 2003 4 rev 1.400
philips semiconductors product specification triacs bt139b series mechanical data dimensions in mm net mass: 1.4 g fig.13. sot404 : centre pin connected to mounting base. mounting instructions dimensions in mm fig.14. sot404 : soldering pattern for surface mounting . notes 1. plastic meets ul94 v0 at 1/8". 11 max 4.5 max 1.4 max 10.3 max 0.5 15.4 2.5 0.85 max (x2) 2.54 (x2) 17.5 11.5 9.0 5.08 3.8 2.0 april 2003 5 rev 1.400
philips semiconductors product specification triacs bt139b series definitions data sheet status data sheet product definitions status 2 status 3 objective data development this data sheet contains data from the objective specification for product development. philips semiconductors reserves the right to change the specification in any manner without notice preliminary data qualification this data sheet contains data from the preliminary specification. supplementary data will be published at a later date. philips semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product product data production this data sheet contains data from the product specification. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. changes will be communicated according to the customer product/process change notification (cpcn) procedure snw-sq-650a limiting values limiting values are given in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of this specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the specification. ? philips electronics n.v. 2003 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. life support applications these products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. 2 please consult the most recently issued datasheet before initiating or completing a design. 3 the product status of the device(s) described in this datasheet may have changed since this datasheet was published. the latest information is available on the internet at url http://www.semiconductors.philips.com. april 2003 6 rev 1.400
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